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dc.creatorKim K.-T.
dc.creatorKim C.
dc.creatorSenior D.E.
dc.creatorKim D.
dc.creatorYoon Y.-K.
dc.date.accessioned2020-03-26T16:32:49Z
dc.date.available2020-03-26T16:32:49Z
dc.date.issued2014
dc.identifier.citationThin Solid Films; Vol. 565, pp. 172-178
dc.identifier.issn00406090
dc.identifier.urihttps://hdl.handle.net/20.500.12585/9034
dc.description.abstractDielectric Ba0.6Sr0.4TiO3 (BST) thin films with a different concentration of Ag-dopant of 0.5, 1, 1.5, 2, 3, and 5 mol % have been prepared using an alkoxide-based sol-gel method on a Pt(111)/TiO 2/SiO2/Si substrate and their surface morphology and crystallinity have been examined using scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis, respectively. An on-chip metal-insulator-metal capacitor has been fabricated with the prepared thin film ferroelectric sample. Concentric coplanar electrodes are used for high frequency electrical characterization with a vector network analyzer and a probe station. The SEM images show that increasing Ag doping concentration leads to a decrease in grain size. XRD reveals that the fabricated films show good BST crystallinity for all the concentration while a doping concentration of 5 mol % starts to show an Ag peak, implying a metallic phase. Improved microwave dielectric loss properties of the BST thin films are observed in a low Ag doping level. Especially, BST with an Ag doping concentration of 1 mol % shows the best properties with a dielectric constant of 269.3, a quality factor of 48.1, a tunability at the electric field of 100 kV/cm of 41.2 %, a leakage-current density of 1.045 × 10- 7A/cm2 at an electric field of 100 kV/cm and a figure of merit (defined by tunability (%) divided by tan δ (%)) of 19.59 under a dc bias voltage of 10 V at 1 GHz. © 2014 Elsevier B.V. All rights reserved.eng
dc.format.mediumRecurso electrónico
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherElsevier
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.sourcehttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84905723242&doi=10.1016%2fj.tsf.2014.06.047&partnerID=40&md5=fd01a53151b99e6245ee720b677ca460
dc.titleMicrowave characteristics of sol-gel based Ag-doped (Ba 0.6Sr0.4)TiO3 thin films
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datacite.rightshttp://purl.org/coar/access_right/c_16ec
oaire.resourceTypehttp://purl.org/coar/resource_type/c_6501
oaire.versionhttp://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.driverinfo:eu-repo/semantics/article
dc.type.hasversioninfo:eu-repo/semantics/publishedVersion
dc.identifier.doi10.1016/j.tsf.2014.06.047
dc.subject.keywordsBarium strontium titanate
dc.subject.keywordsDielectric properties
dc.subject.keywordsMicrowave
dc.subject.keywordsSilver doping
dc.subject.keywordsSol-Gel deposition
dc.subject.keywordsTunability
dc.subject.keywordsBarium strontium titanate
dc.subject.keywordsDielectric losses
dc.subject.keywordsDielectric properties
dc.subject.keywordsElectric fields
dc.subject.keywordsFilm preparation
dc.subject.keywordsMetal insulator boundaries
dc.subject.keywordsMicrowaves
dc.subject.keywordsScanning electron microscopy
dc.subject.keywordsSemiconductor doping
dc.subject.keywordsSol-gel process
dc.subject.keywordsSol-gels
dc.subject.keywordsThin films
dc.subject.keywordsAlkoxide-based sol-gel methods
dc.subject.keywordsElectrical characterization
dc.subject.keywordsMetal insulator metal capacitor (MIM)
dc.subject.keywordsMicrowave characteristics
dc.subject.keywordsSilver doping
dc.subject.keywordsSol-gel deposition
dc.subject.keywordsThin film ferroelectrics
dc.subject.keywordsTunabilities
dc.subject.keywordsSilver
dc.rights.accessrightsinfo:eu-repo/semantics/restrictedAccess
dc.rights.ccAtribución-NoComercial 4.0 Internacional
dc.identifier.instnameUniversidad Tecnológica de Bolívar
dc.identifier.reponameRepositorio UTB
dc.description.notesThis work was supported by the Global R&D program of MOTIE/KIAT (N0000686)
dc.type.spaArtículo
dc.identifier.orcid7409321912
dc.identifier.orcid56021218700
dc.identifier.orcid36698427600
dc.identifier.orcid7409767761
dc.identifier.orcid7402126778


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Universidad Tecnológica de Bolívar - 2017 Institución de Educación Superior sujeta a inspección y vigilancia por el Ministerio de Educación Nacional. Resolución No 961 del 26 de octubre de 1970 a través de la cual la Gobernación de Bolívar otorga la Personería Jurídica a la Universidad Tecnológica de Bolívar.